IUB Library OPAC
Fundamentals of silicon carbide technology : (Record no. 21503)
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| fixed length control field | 06450cam a2200805 i 4500 |
| 001 - CONTROL NUMBER | |
| control field | ocn881418299 |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | OCoLC |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20230823095624.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS--GENERAL INFORMATION | |
| fixed length control field | m o d |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION | |
| fixed length control field | cr ||||||||||| |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 140613s2014 si a ob 001 0 eng |
| 010 ## - LIBRARY OF CONGRESS CONTROL NUMBER | |
| LC control number | 2014023306 |
| 040 ## - CATALOGING SOURCE | |
| Original cataloging agency | DLC |
| Language of cataloging | eng |
| Description conventions | rda |
| -- | pn |
| Transcribing agency | DLC |
| Modifying agency | YDX |
| -- | OCLCF |
| -- | N$T |
| -- | E7B |
| -- | DG1 |
| -- | YDXCP |
| -- | MYG |
| -- | IEEEE |
| -- | CDX |
| -- | RECBK |
| -- | UMI |
| -- | COO |
| -- | DEBBG |
| -- | OCLCO |
| -- | OCLCQ |
| -- | EBLCP |
| -- | B24X7 |
| -- | OTZ |
| -- | OCLCQ |
| 019 ## - | |
| -- | 902744442 |
| -- | 927507781 |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781118313558 |
| Qualifying information | (ePub) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 1118313550 |
| Qualifying information | (ePub) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781118313541 |
| Qualifying information | (Adobe PDF) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 1118313542 |
| Qualifying information | (Adobe PDF) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781118313534 |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 1118313534 |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| Cancelled/invalid ISBN | 9781118313527 |
| Qualifying information | (cloth) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| Cancelled/invalid ISBN | 1118313526 |
| Qualifying information | (cloth) |
| 029 1# - (OCLC) | |
| OCLC library identifier | AU@ |
| System control number | 000053968126 |
| 029 1# - (OCLC) | |
| OCLC library identifier | CHBIS |
| System control number | 010276077 |
| 029 1# - (OCLC) | |
| OCLC library identifier | CHBIS |
| System control number | 010441668 |
| 029 1# - (OCLC) | |
| OCLC library identifier | CHVBK |
| System control number | 332017850 |
| 029 1# - (OCLC) | |
| OCLC library identifier | CHVBK |
| System control number | 334095247 |
| 029 1# - (OCLC) | |
| OCLC library identifier | DEBBG |
| System control number | BV042487457 |
| 029 1# - (OCLC) | |
| OCLC library identifier | DEBSZ |
| System control number | 434828556 |
| 029 1# - (OCLC) | |
| OCLC library identifier | NLGGC |
| System control number | 382545524 |
| 029 1# - (OCLC) | |
| OCLC library identifier | NZ1 |
| System control number | 15910066 |
| 029 1# - (OCLC) | |
| OCLC library identifier | DEBBG |
| System control number | BV043396915 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (OCoLC)881418299 |
| Canceled/invalid control number | (OCoLC)902744442 |
| -- | (OCoLC)927507781 |
| 037 ## - SOURCE OF ACQUISITION | |
| Stock number | CL0500000549 |
| Source of stock number/acquisition | Safari Books Online |
| 042 ## - AUTHENTICATION CODE | |
| Authentication code | pcc |
| 050 00 - LIBRARY OF CONGRESS CALL NUMBER | |
| Classification number | TK7871.15.S56 |
| 072 #7 - SUBJECT CATEGORY CODE | |
| Subject category code | TEC |
| Subject category code subdivision | 009070 |
| Source | bisacsh |
| 082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER | |
| Classification number | 621.3815/2 |
| Edition number | 23 |
| 049 ## - LOCAL HOLDINGS (OCLC) | |
| Holding library | MAIN |
| 100 1# - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Kimoto, Tsunenobu, |
| Dates associated with a name | 1963- |
| 245 10 - TITLE STATEMENT | |
| Title | Fundamentals of silicon carbide technology : |
| Remainder of title | growth, characterization, devices and applications / |
| Statement of responsibility, etc | Tsunenobu Kimoto, James A. Cooper. |
| 246 30 - VARYING FORM OF TITLE | |
| Title proper/short title | Fundamentals of SiC technology |
| 264 #1 - | |
| -- | Singapore : |
| -- | Wiley, |
| -- | [2014] |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 1 online resource (xiv, 538 pages) : |
| Other physical details | illustrations |
| 336 ## - | |
| -- | text |
| -- | txt |
| -- | rdacontent |
| 337 ## - | |
| -- | computer |
| -- | n |
| -- | rdamedia |
| 338 ## - | |
| -- | online resource |
| -- | nc |
| -- | rdacarrier |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE | |
| Bibliography, etc | Includes bibliographical references and index. |
| 588 0# - | |
| -- | Print version record and CIP data provided by publisher. |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | ""Title Page""; ""Copyright""; ""About the Authors""; ""Preface""; ""Chapter 1: Introduction""; ""1.1 Progress in Electronics""; ""1.2 Features and Brief History of Silicon Carbide""; ""1.3 Outline of This Book""; ""References""; ""Chapter 2: Physical Properties of Silicon Carbide""; ""2.1 Crystal Structure""; ""2.2 Electrical and Optical Properties""; ""2.3 Thermal and Mechanical Properties""; ""2.4 Summary""; ""References""; ""Chapter 3: Bulk Growth of Silicon Carbide""; ""3.1 Sublimation Growth""; ""3.2 Polytype Control in Sublimation Growth"" |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | ""3.3 Defect Evolution and Reduction in Sublimation Growth""""3.4 Doping Control in Sublimation Growth""; ""3.5 High- Temperature Chemical Vapor Deposition""; ""3.6 Solution Growth""; ""3.7 3C-SiC Wafers Grown by Chemical Vapor Deposition""; ""3.8 Wafering and Polishing""; ""3.9 Summary""; ""References""; ""Chapter 4: Epitaxial Growth of Silicon Carbide""; ""4.1 Fundamentals of SiC Homoepitaxy""; ""4.2 Doping Control in SiC CVD""; ""4.3 Defects in SiC Epitaxial Layers""; ""4.4 Fast Homoepitaxy of SiC""; ""4.5 SiC Homoepitaxy on Non-standard Planes"" |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | ""4.6 SiC Homoepitaxy by Other Techniques""""4.7 Heteroepitaxy of 3C-SiC""; ""4.8 Summary""; ""References""; ""Chapter 5: Characterization Techniques and Defects in Silicon Carbide""; ""5.1 Characterization Techniques""; ""5.2 Extended Defects in SiC""; ""5.3 Point Defects in SiC""; ""5.4 Summary""; ""References""; ""Chapter 6: Device Processing of Silicon Carbide""; ""6.1 Ion Implantation""; ""6.2 Etching""; ""6.3 Oxidation and Oxide/SiC Interface Characteristics""; ""6.4 Metallization""; ""6.5 Summary""; ""References""; ""Chapter 7: Unipolar and Bipolar Power Diodes"" |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | ""7.1 Introduction to SiC Power Switching Devices""""7.2 Schottky Barrier Diodes (SBDs)""; ""7.3 pn and pin Junction Diodes""; ""7.4 Junction-Barrier Schottky (JBS) and Merged pin-Schottky (MPS) Diodes""; ""References""; ""Chapter 8: Unipolar Power Switching Devices""; ""8.1 Junction Field-Effect Transistors (JFETs)""; ""8.2 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)""; ""References""; ""Chapter 9: Bipolar Power Switching Devices""; ""9.1 Bipolar Junction Transistors (BJTs)""; ""9.2 Insulated-Gate Bipolar Transistors (IGBTs)""; ""9.3 Thyristors""; ""References"" |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | ""Chapter 10: Optimization and Comparison of Power Devices""""10.1 Blocking Voltage and Edge Terminations for SiC Power Devices""; ""10.2 Optimum Design of Unipolar Drift Regions""; ""10.3 Comparison of Device Performance""; ""References""; ""Chapter 11: Applications of Silicon Carbide Devices in Power Systems""; ""11.1 Introduction to Power Electronic Systems""; ""11.2 Basic Power Converter Circuits""; ""11.3 Power Electronics for Motor Drives""; ""11.4 Power Electronics for Renewable Energy""; ""11.5 Power Electronics for Switch-Mode Power Supplies"" |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | "Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field."-- |
| -- | Portion of summary from book. |
| 526 ## - STUDY PROGRAM INFORMATION NOTE | |
| Department | Electrical & Electronic Engineering |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | Silicon carbide. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | Semiconductors. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | Integrated circuits. |
| 650 #4 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | Silicon carbide. |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | TECHNOLOGY & ENGINEERING |
| General subdivision | Mechanical. |
| Source of heading or term | bisacsh |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | Integrated circuits. |
| Source of heading or term | fast |
| -- | (OCoLC)fst00975535 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | Semiconductors. |
| Source of heading or term | fast |
| -- | (OCoLC)fst01112198 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | Silicon carbide. |
| Source of heading or term | fast |
| -- | (OCoLC)fst01118657 |
| 655 #4 - INDEX TERM--GENRE/FORM | |
| Genre/form data or focus term | Electronic books. |
| 700 1# - ADDED ENTRY--PERSONAL NAME | |
| Personal name | Cooper, James A., |
| Dates associated with a name | 1946- |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY | |
| Display text | Print version: |
| Main entry heading | Kimoto, Tsunenobu, 1963- |
| Title | Fundamentals of silicon carbide technology. |
| Place, publisher, and date of publication | Singapore : John Wiley & Sons Singapore Pte. Ltd., [2014] |
| International Standard Book Number | 9781118313527 |
| Record control number | (DLC) 2014016546 |
| -- | (OCoLC)881406991 |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | <a href="http://dx.doi.org/10.1002/9781118313534">http://dx.doi.org/10.1002/9781118313534</a> |
| Public note | Wiley Online Library |
| 994 ## - | |
| -- | 92 |
| -- | DG1 |
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